The TS512MSK64W3N is a 512 M x 64 bits DDR3-1333 SO-DIMM. The TS512MSK64W3N consists of 16 pcs 256 M x 8 bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64W3N is a dual in-line memory module and is intended for mounting into 204-pin edge connector sockets.¦Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Enhanced compatibility
Designed as a generic upgrade, this memory module seamlessly integrates with a wide range of systems, ensuring an easy and efficient upgrade path for various devices.
Efficient performance
With a memory speed of 1333 MHz and a CAS latency of CL9, this module delivers a balanced performance for both everyday computing and more demanding applications, making multitasking smoother and more efficient.
Low power consumption
Operating at a low supply voltage of 1.35 V, this DDR3L SDRAM module reduces energy consumption, which can lead to longer battery life in portable devices and lower energy costs for desktops.
Reliable data integrity
Featuring non-ECC data integrity check, this memory module ensures that your data is accurately stored and retrieved, providing a reliable upgrade for users who require dependable performance without the need for error correction code.
Compact and durable design
The SO-DIMM 204-pin form factor combined with a module height of just 1.181 inches allows for a compact fit in small spaces, while the compliance with RoHS standards ensures an environmentally friendly and durable product.
